SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize an upper electrode contact plug with stable contact resistance without causing charge-up damage to a capacitor.

SOLUTION: The device has: a lower electrode 108 formed in a bottom part and a side wall part of a first hole in a first layer insulating film 105 formed on a semiconductor substrate 100; a capacity insulating film 109 covering the lower electrode 108; an upper electrode 110 covering the capacity insulating film 109; an upper electrode contact part 112 which is formed in a bottom part and a side wall part of a second hole in the first layer insulating film 105 by extending a conductive film constituting the upper electrode 110; a second layer insulating film 114 formed on the first layer insulating film 105, the upper electrode 110 and the upper electrode contact part 112; and an upper electrode contact plug 120 which passes through the second layer insulating film 114 and is buried in the first contact hole reaching the upper electrode contact part 112. The second hole has an opening diameter larger than an opening diameter of the first hole.

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