| 摘要 |
A device may include at least one of the following: A first substrate including a plurality of N-channel metal oxide semiconductor transistors, with the N-channel MOS transistors including an access transistor and a drive transistor. A second substrate including a plurality of P-channel metal oxide semiconductor transistors used as pull-up devices. A first connecting device formed on at least one of the first substrate and the second substrate to connect the plurality of N-channel metal oxide semiconductor transistors to the plurality of P-channel metal oxide semiconductor transistors, wherein the four N-channel metal oxide semiconductor transistors formed on the first substrate and the two P-channel metal oxide semiconductor transistors formed on the second substrate form the unit memory cell.
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