| 摘要 |
<p>A sulfonyl group-containing acrylic photoresist monomer is provided to ensure improved resolution and process margin of a photoresist pattern, to improve the focus depth margin and line edge roughness of a photoresist film, and to obtain a fine photoresist pattern by virtue of high dry etching resistance and PEB stability. A sulfonyl group-containing acrylic photoresist monomer is represented by the following formula 1. In formula 1, each of R* and R' independently represents H or methyl; each of R, R1, R2, R3 and R4 independently represents H, a C1-C20 alkyl, ketone, C4-C20 cycloalkyl or multicycloalkyl; and R5 is selected from the group consisting of methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, hexyl, phenyl, benzyl, toluene, xylene, perfluoromethyl, perfluoroethyl, perfluoropropyl, perfluorobutyl and perfluorooctyl.</p> |
