| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fabrication process of a semiconductor wafer, in which a nitride semiconductor film is formed on a substrate of a desired material other than a substrate for the epitaxial growth of a nitride semiconductor film. <P>SOLUTION: A first nitride semiconductor film 2 is formed on a first substrate 1 and a second nitride semiconductor film 3 having a higher melting point than that of the first film 2 is formed on the first nitride semiconductor film 2. Subsequently, a carrier substrate 4 is adhered to the surface of the second nitride film 3. Then, the substrate 1 attached together, the first nitride semiconductor film 2, the second nitride semiconductor film 3 and a wafer containing the carrier substrate 4 are heat treated at a temperature higher than the melting point of the first nitride semiconductor film 2 and lower than that of the second nitride semiconductor film 3, to melt the first nitride semiconductor film 2 and remove the first substrate 1. Further, the second substrate 6 is attached to the surface of the second nitride semiconductor film 3 which is attached on the carrier substrate 4, and the carrier substrate 4 is removed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
