发明名称 |
Method for heat-treating silicon wafer and silicon wafer |
摘要 |
This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1x10<SUP>10 </SUP>atoms/cm<SUP>3 </SUP>or less.
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申请公布号 |
US7311775(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20050196480 |
申请日期 |
2005.08.04 |
申请人 |
SUMCO CORPORATION |
发明人 |
KUSABA TATSUMI;OKUDA HIDEHIKO;NONOGAKI YOSHIHISA |
分类号 |
C30B25/12;H01L21/324;C30B25/14;C30B29/06;C30B33/02;H01L21/322 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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