| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon single crystal of a high quality without any iron contamination by solving the following problem: the single crystal to be pulled is apt to dislocate when a cylinder made of quartz (quartz cylinder) for covering the inner wall of a graphite cylinder is provided in order to obtain anticontamination effect for a long period of time in the apparatus for manufacturing the silicon single crystal by a CZ method. SOLUTION: In the apparatus 1 for manufacturing the silicon single crystal, a graphite cylinder 11 is provided above a silicon melt 18 so as to surround a silicon single crystal 3 to be pulled, the quartz cylinder 13 transparent in at least a portion thereof is arranged at the inner side of the graphite cylinder 11, and a ring 15 for rectifying gas, whose inside is formed in a tapered shape, is arranged at the upper end of the opening part of the quartz cylinder 13. COPYRIGHT: (C)2008,JPO&INPIT
|
