| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a via hole formed with the use of a Bosch process with a uniform film formed in the via hole. SOLUTION: The via hole 3 penetrating through the predetermined region of a semiconductor substrate 1 is formed by etching from one surface to another surface of the semiconductor substrate 1 in applying the Bosch process with the use of a mask layer 2 as a mask. Next, the mask layer 2 is removed. An inner wall surface of the via hole 3 is planarized by removing a scallop shape 4 by a dry etching method. Subsequently, an insulating film, a barrier layer or the like are uniformly formed in the via hole 3. COPYRIGHT: (C)2008,JPO&INPIT
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