发明名称 Method of polycrystallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor
摘要 A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector.
申请公布号 US7294538(B2) 申请公布日期 2007.11.13
申请号 US20050532459 申请日期 2005.11.02
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 KIM HYUN-JAE;KANG MYUNG-KOO
分类号 H01L21/268;H01L21/84;B23K26/02;B23K26/06;H01L21/20;H01L21/336;H01L21/77;H01L29/786 主分类号 H01L21/268
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