发明名称 |
Method of polycrystallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor |
摘要 |
A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector. |
申请公布号 |
US7294538(B2) |
申请公布日期 |
2007.11.13 |
申请号 |
US20050532459 |
申请日期 |
2005.11.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM HYUN-JAE;KANG MYUNG-KOO |
分类号 |
H01L21/268;H01L21/84;B23K26/02;B23K26/06;H01L21/20;H01L21/336;H01L21/77;H01L29/786 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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