| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a circuit for determining the resistive state of a resistive memory cell being read. SOLUTION: The method includes determining the resistive state of the memory cell being read by comparing a current dependent on the resistive state of the memory cell being read with the reference current dependent on a resistive state of at least one reference resistive memory cell. A read circuit is constructed to compare the two currents. The resistive state of the memory cell being read is indicative of the data bit stored by the memory cell. COPYRIGHT: (C)2008,JPO&INPIT |
