| 摘要 |
<P>PROBLEM TO BE SOLVED: To arbitrarily control the spatial distribution characteristic of plasma density while sufficiently preventing or suppressing the formation of an undesired film on another opposite electrode, in a capacitive-coupling plasma treatment apparatus in which superposition of two waves of different frequencies is applied. <P>SOLUTION: A substrate W to be treated is placed on a susceptor 16 of a lower electrode, and wave of a first high frequency for plasma generation is applied from a high-frequency power source 30, and wave of a second high frequency for ion extraction is applied from a high-frequency power source 70. An upper electrode 34 to be arranged on the upper part of the susceptor 16 oppositely in parallel to the susceptor 16 is attached on a chamber 10 via an annular insulator 35. The upper electrode 34 is connected to a ground potential (usually, to the camber 10) via a rod-like inductor 54 and a conductor wire 56. <P>COPYRIGHT: (C)2008,JPO&INPIT |
