| 摘要 |
PROBLEM TO BE SOLVED: To achieve high output of a semiconductor light emitting device, and to perform integration with low cost without degrading low power consumption and respective characteristics of an integrated semiconductor optical waveguide element where a high output semiconductor light emitting device is integrated with an electro-absorption optical modulator. SOLUTION: In the semiconductor light emitting device having a ridge 12, ridge width can be enlarged while keeping single transverse mode by setting a low refractive index difference between the ridge 12 and other component, diffusion current is prevented and increase in refractive index difference is prevented by forming substantially vertical trenches along the opposite sides of the ridge, degradation in characteristics due to regrowth is prevented by forming a grating in the ridge, the number of times of growing is not increased when they are integrated with an optical element such as the electro-absorption optical modulator, and the light emitting device is integrated with an optical element such as the electro-absorption optical modulator with no limitation on the ridge width by employing a tapered waveguide. COPYRIGHT: (C)2007,JPO&INPIT
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