| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device arranged on an insulating layer while enabling to suppress contamination due to impurities. SOLUTION: A first semiconductor layer 2 and a second semiconductor layer 3 are successively laminated on a semiconductor substrate 1, supporters 7 for supporting the second semiconductor layer 3 on the semiconductor substrate 1 are each formed in each of grooves 6, and a cavity 9 is formed between the semiconductor substrate 1 and the second semiconductor layer 3 by allowing an etching gas or an etching solution to contact the first semiconductor layer 2 via the grooves 8. An oxide film 10 is formed on the surface of the cavity 9 between the semiconductor substrate 1 and the second semiconductor layer 3, and a gettering layer 13 is embedded into the inside of the cavity 9 having the surface covered with the oxidation film 10 and into the inside of the grooves 6, 8, by using a CVD method or the like. COPYRIGHT: (C)2007,JPO&INPIT
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