| 摘要 |
PROBLEM TO BE SOLVED: To homogenize resistivity distribution and interstitial oxygen concentration distribution in a silicon single crystal, and to facilitate cost reduction of a silicon wafer. SOLUTION: A rare gas is introduced into a main chamber 11, a raw material silicon melt 12 is formed inside a quartz crucible 13, a seed crystal is dipped into the melt, and a pulling shaft 19 is rotated in one direction to pull the silicon single crystal 15 at a prescribed pulling rate. Here, a support shaft 17 rotates and moves upward to keep a constant liquid level of the raw material silicon melt 12. In a pulling method for growing the silicon single crystal 15, the distance L between a lower end of a radiation shield 16 and the liquid level of the raw material silicon melt 12 is adjusted to 60 mm or larger, and the pulling rate V is adjusted so that it satisfies the relation: 0.55 mm/min≤V<0.75 mm/min. COPYRIGHT: (C)2007,JPO&INPIT
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