| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a metal-containing film in which film deposition under low temperature conditions is excellent, and capable of stable film deposition, and also capable of depositing a thin film enough in step coverage. SOLUTION: The raw material for MOCVD (Metal Organic Chemical Vapor Deposition) uses an organo-metallic compound expressed by formula (1); wherein, M is bivalent Pb, tetravalent Pb, tetravalent Zr or tetravalent Ti; R<SP>1</SP>and R<SP>2</SP>are a 1 to 4C direct-chain or branched alkyl group, and are the same or different; R<SP>3</SP>is a 2 to 4C direct-chain or branched alkyl group; and, when M is bivalent Pb, n is 2 and also m is 2, when M is tetravalent Pb, n is 2 and also m is 0, and when M is tetravalent Zr or tetravalent Ti, n is 4 and also m is 4, or n is 2 and also m is 0. COPYRIGHT: (C)2007,JPO&INPIT
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