| 摘要 |
A CMOS image sensor is provided to avoid a decrease of driving current by making a gate electrode of at least one of the transistors constituting a unit pixel have two gate length per a unit width. A CMOS image sensor includes a photodiode and a plurality of transistors for switching the charges accumulated in the photodiode to transfer the charges to one column line. The gate electrode of at least one of the plurality of transistors has different lengths according to a portion of the gate electrode so that the gate electrode has two channel lengths according to the portion to increase driving current. The gate electrode can be connected to the photodiode, having the smallest channel length in a central portion overlapping the gate electrode.
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