| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent defects of an interlayer dielectric by polishing a protrudent part of the interlayer dielectric using two-step CMP of a low pressure and high pressure. A cylindrical capacitor(260) is formed at a cell region(C) of a substrate(200). An interlayer dielectric(270) is formed on the resultant structure. The interlayer dielectric of the cell region is etched partially. A protrudent part of the interlayer dielectric of a peripheral region(P) is firstly polished by first CMP using a low pressure of 1.5~3 psi. The interlayer dielectric is secondly polished by second CMP using a high pressure of 5~9 psi.
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