| 摘要 |
A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD 1, RD 2 is provided in each sub-amplifier SAMP. The read enable signals RD 1, RD 2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD 1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD 2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.
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