Series resistance and/or resistance-capacitance-constant measuring method for e.g. dynamic random access memory, involves connecting storage cell to ring oscillator, and measuring frequencies that are resulting from oscillator

摘要

The method involves connecting a storage cell (122a) to a ring oscillator (110). Frequencies that are resulting from the oscillator are measured. An access transistor (122) is inserted in a conductive state for connecting the cell to the oscillator. The cell is separated from the oscillator, and the frequencies of the oscillator after separating from the cell are measured. The frequencies of the oscillator connected with the cell are compared with the frequencies of the oscillator after separated from the cell : An independent claim is also included for a semiconductor memory comprising a storage cell.