| 摘要 |
A non-volatile memory device includes a matrix of non-volatile memory cells, writing circuitry and reading circuitry for the memory cells of the matrix. The device comprises a counter including a sector of non-volatile memory cells and control logic capable of scanning the memory cells of the sector using the reading circuitry and of updating the sector by commanding the writing, using the writing circuitry, of a given value in a memory cell different from the memory cell containing said given value.
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