| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of relaxing an electrical field in the vicinity of an electrode formed in a trench at the bottom of the trench of the lateral power semiconductor device having the trench structure, and to provide its manufacturing method. <P>SOLUTION: A p-type floating region 45 is formed within an expanded N drain region 25 formed on the bottom of the trench 24. The region 45 is separated from both a p-type first channel region 43 and a p-type second channel region 44 with the trench 24 bordered, and is formed so as to further overlap on the overlap part where a first gate electrode 28 and a second gate electrode 29 formed within the trench 24 and an interface of an interlayer dielectric 30 filling in between them overlapping the region 25 seen from above of an element to relax the field concentration at the overlap part. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
