摘要 |
Semiconductor structures and methods for fabricating semiconductor structures are provided. The method comprises forming a first insulating layer having a substantially planar surface overlying a first conductive layer of an interconnect stack. A thin film resistor is formed overlying the first insulating layer and a second insulating layer is deposited overlying the first insulating layer and the resistor. A portion of the second insulating layer is removed to form a substantially planar surface. The second insulating layer is anisotropically etched to form a first via to the first conductive layer and a fill material comprising tungsten is deposited within the first via. The second insulating layer is wet etched to form a second via to the thin film resistor and a second conductive layer is deposited overlying the second insulating layer and within the second via.
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