发明名称 A power semiconductor device
摘要 <p>The object of the invention is to provide a power semiconductor module having solder joints that are highly reliable for temperature cycles. In a power semiconductor module of the present invention, a solder joint between a metal circuit pattern and metal terminal on an insulation substrate is formed by covering, from above, a high melting point solder, which is joined on the metal circuit pattern and has a prescribed thickness, with a low melting point solder and then joining the metal terminal with the low melting point solder.</p>
申请公布号 EP1729343(A3) 申请公布日期 2007.03.07
申请号 EP20060011142 申请日期 2006.05.30
申请人 HITACHI, LTD.;HITACHI HARAMACHI ELECTRONICS CO., LTD. 发明人 TOYODA, YASUSHI;SAITO, KATSUAKI;KOIKE, YOSHIHIKO;OOKUBO, SHINJI
分类号 H01L23/498;H01L23/373 主分类号 H01L23/498
代理机构 代理人
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