发明名称 |
A power semiconductor device |
摘要 |
<p>The object of the invention is to provide a power semiconductor module having solder joints that are highly reliable for temperature cycles. In a power semiconductor module of the present invention, a solder joint between a metal circuit pattern and metal terminal on an insulation substrate is formed by covering, from above, a high melting point solder, which is joined on the metal circuit pattern and has a prescribed thickness, with a low melting point solder and then joining the metal terminal with the low melting point solder.</p> |
申请公布号 |
EP1729343(A3) |
申请公布日期 |
2007.03.07 |
申请号 |
EP20060011142 |
申请日期 |
2006.05.30 |
申请人 |
HITACHI, LTD.;HITACHI HARAMACHI ELECTRONICS CO., LTD. |
发明人 |
TOYODA, YASUSHI;SAITO, KATSUAKI;KOIKE, YOSHIHIKO;OOKUBO, SHINJI |
分类号 |
H01L23/498;H01L23/373 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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