| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing cloth which is used for polishing semiconductor substrates and the like and is hard, while holding elasticity. <P>SOLUTION: This polishing cloth is characterized by adhering a urethane resin to a nonwoven fabric. The urethane resin is preferably an isocyanurated urethane resin, more preferably a urethane isocyanuated in the presence of one or more isocyanuration catalysts selected from tertiary amines and organic metal salts. The nonwoven fabric preferably contains polyester fibers. The polishing cloth preferably has an Ascar C hardness of 90 to 98, a compressibility of 1.0 to 2.5%, and a recovery factor of 55 to 75%. <P>COPYRIGHT: (C)2007,JPO&INPIT |
