发明名称 MATERIAL FOR FORMING PROTECTIVE FILM, AND METHOD FOR FORMING PHOTORESIST PATTERN BY USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a material for forming a protective film that can simultaneously prevent alteration of a resist film during liquid immersion lithography and alteration of the liquid used for the liquid immersion lithography and that can result in formation of a resist pattern having a preferable profile without increasing the number of processes. <P>SOLUTION: The material for forming a protective film is composed of: an alkali-soluble polymer having a structural unit expressed by general formula (I); and an alcohol-based solvent. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007024959(A) 申请公布日期 2007.02.01
申请号 JP20050203150 申请日期 2005.07.12
申请人 TOKYO OHKA KOGYO CO LTD 发明人 ISHIZUKA KEITA;ENDO KOTARO;YOSHIDA MASAAKI
分类号 G03F7/11;C08F20/24;C08F32/04;H01L21/027 主分类号 G03F7/11
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