发明名称 |
MATERIAL FOR FORMING PROTECTIVE FILM, AND METHOD FOR FORMING PHOTORESIST PATTERN BY USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material for forming a protective film that can simultaneously prevent alteration of a resist film during liquid immersion lithography and alteration of the liquid used for the liquid immersion lithography and that can result in formation of a resist pattern having a preferable profile without increasing the number of processes. <P>SOLUTION: The material for forming a protective film is composed of: an alkali-soluble polymer having a structural unit expressed by general formula (I); and an alcohol-based solvent. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007024959(A) |
申请公布日期 |
2007.02.01 |
申请号 |
JP20050203150 |
申请日期 |
2005.07.12 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
ISHIZUKA KEITA;ENDO KOTARO;YOSHIDA MASAAKI |
分类号 |
G03F7/11;C08F20/24;C08F32/04;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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