| 发明名称 |
Semiconductor device including back-gated transistors and method of fabricating the device |
| 摘要 |
A memory cell (e.g., static random access memory (SRAM) cell) includes a plurality of back-gated n-type field effect transistors (nFETs), and a plurality of double-gated p-type field effect transistors (pFETs) operatively coupled to the plurality of nFETs.
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| 申请公布号 |
US2006274569(A1) |
申请公布日期 |
2006.12.07 |
| 申请号 |
US20050142248 |
申请日期 |
2005.06.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSHI RAJIV V.;KIM KEUNWOO;NOWAK EDWARD J.;WILLIAMS RICHARD Q. |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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