ORGANIC INORGANIC MATTER COMPLEX, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an organic inorganic matter complex excellent in mechanical intensity, heat resistance, and pliability; and to provide a manufacturing method of an organic inorganic matter complex, and a semiconductor device, along with the capability of materializing low dielectric constant in the case of applying it to an interlayer insulating film of a semiconductor device, an interlayer wiring insulating film, a passivation film, or the like. SOLUTION: The organic inorganic matter complex consists of a structure unit shown in a general formula (1). In the formula, M expresses metal or silicon, X expresses -O- bond or OH, R1expresses a molecule chain group containing carbon atom of carbon number 1-20, R2expresses a methyl group, an ethyl group, a propyl group, or a phenyl group, and n1 and n2 express 0, 1, or 2. COPYRIGHT: (C)2007,JPO&INPIT