MEASUREMENT gamma;-FOCUSED ION BEAM SYSTEM AND METHOD OF ION INDUCED SECONDARY ELECTRON EMISSION PARAMETER

摘要

A gamma-focused ion beam system in order to measure current variation for ion induced secondary electron emission parameter and a method for measuring the same are provided to eliminate a charge accumulating phenomenon on a surface of a semiconductor. A gamma-focused ion beam system includes an ion bean focusing unit(10) for focusing an ion beam onto a surface of an object, a vacuum container(200), and a vacuum pump connected to the vacuum container for vacuuming the vacuum container. The vacuum container has a conductor pad part(30) for inducing current phenomenon on the object, a measuring material(40) enclosing the conductor pad part, and a measuring stage(50) on which the measuring material is positioned.