Solid-state image sensor with photoelectric conversion units each having a first conductive-type impurity region boundary non-coplanar with second conductive-type impurity region boundaries

摘要

A first p⁺-type region on a surface of a photodiode unit is formed over a region from a surface of the photodiode unit through a surface of a signal charge read-out unit until reaching the charge transfer unit. Also, the following structure is adapted: the structure in which a boundary between the first p⁺-type region and a p⁺⁺-type region is not on a same plane with a boundary of an n-type impurity region which forms the photodiode unit on a side of the signal charge read-out unit. Further, a second p⁺-type region is formed between the first p⁺-type region and the p⁺⁺-type region on the surface of the photodiode unit. The second p⁺-type region has an impurity concentration between the impurity concentrations of the first p⁺-type region and the p⁺⁺-type region.