| 摘要 |
A nano electronic device is provided to overcome physical limits due to the downsizing of semiconductor elements by using non-linear conductive characteristics of a metallic spiral thin film. An upper electrode(20) and a lower electrode(30) are formed on an upper surface and a lower surface of a metallic thin film(10) of spiral structure, respectively. A predetermined electric field is formed by applying a predetermined voltage to the upper and the lower electrode. A predetermined magnetic field is then applied to the resultant structure from the outside to make the metallic thin film have non-linear conductive characteristics. The metallic thin film is composed of a magnetic body or a magnetic multilayer thin film structure.
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