| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to prevent the generation of seam and void in the isolation layer without the degradation of characteristics of a tunnel oxide layer by using oxidation on a polysilicon layer. A trench is formed on a semiconductor substrate(200). A buffer oxide layer(205) is formed along an upper surface of the resultant structure. A polysilicon layer(206) is formed on the entire surface of the resultant structure. An oxidation process is performed on the polysilicon layer, so that the trench is filled with the buffer oxide layer and the oxidized polysilicon layer. An isolation layer(207) composed of the buffer oxide layer and the oxidized polysilicon layer is completed on the resultant structure by etching.
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