| 摘要 |
Disclosed is a method for forming a metal interconnection line in a semiconductor device. The method includes the steps of: forming an inter-layer insulation layer on a substrate, the inter-layer insulation layer having at least one contact hole exposing a portion of the substrate; forming a barrier metal layer on a bottom of said at least one contact hole and an upper surface of the inter-layer insulation layer; forming an amorphous seed layer on said at least one contact hole; converting portions of the seed layer disposed on an upper part of said at least one contact hole into a metal deposition blocking layer; selectively forming at least one adhesion layer on the bottom and sidewalls of said at least one contact hole by using the seed layer; and selectively forming at least one plug inside of said at least one contact hole.
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