SILICON OXIDE CAP ON HIGH-DIELECTRIC CONSTANT FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of fabricating a high-k gate insulating film and a silicon oxide film on the high-k gate insulating film whereby a defect and trapping are avoided that cause a short circuit between doped silicon gates on the high-k gate insulating film. SOLUTION: The method for forming an integrated circuit configuration on a semiconductor substrate includes deposition of the high-k gate insulating material on the substrate by using an atomic layer deposition process. A silicon oxide capping layer is deposited on the gate insulating material in a fast and thermochemical deposition process. A gate electrode is formed on the silicon oxide capping layer. COPYRIGHT: (C)2007,JPO&INPIT