| 摘要 |
A semiconductor memory employs the redundancy memory technique and the error correction code technique and method of correcting errors. The method of correcting errors reads data bits and a checking bit from a predetermined unit of a first memory array such as a main memory array, and the data bits are checked based on the checking bit to determine if there is any error. If there is an error in the data bits, the checking bit is used to correct the error and the data bits together with the checking bit are written back to the predetermined unit. If there is still error in the data bits after the read-check-write process is repeated a predetermined number of times, the predetermined unit is marked as a faulty unit and the data bits together with the checking bit are written to a second memory array such as a redundancy memory array.
|
