| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element by which the area of an active region is increased while not increasing the area of an element and not decreasing the area of a field region. <P>SOLUTION: This method comprises a step for forming an element separating film which demarcates the active region and the field region by forming a trench in a specified region on a semiconductor substrate, and then burying an insulating film; and a step for etching the semiconductor substrate in the active region into a specified depth, so that the surface becomes a curved surface. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
