GaN-based III - V group compound semiconductor and p-typed electrode for the semiconductor,申请号KR20050115061-传众专利搜索

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发明名称	GaN-based III - V group compound semiconductor and p-typed electrode for the semiconductor
摘要
申请公布号	KR100634553(B1)	申请公布日期	2006.10.16
申请号	KR20050115061	申请日期	2005.11.29
申请人		发明人
分类号	H01L33/00;H01L33/40	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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