发明名称 |
EFFICIENT USE OF WAFER AREA WITH DEVICE UNDER THE PAD APPROACH |
摘要 |
More efficient use of silicon area is achieved by incorporating an active device beneath a pad area of a semiconductor structure. The pad area includes a substrate having a first metal layer above it. A second metal layer is below the first metal layer. The active device resides in the substrate below the second metal layer. A layer of dielectric separates the first and second metal layers. A via within the dielectric layer electrically couples the first and second metal layers. A via connects to the active component. Subsequent metal layers can be arranged between the first and second metal layers. |
申请公布号 |
EP1709685(A1) |
申请公布日期 |
2006.10.11 |
申请号 |
EP20040815008 |
申请日期 |
2004.12.17 |
申请人 |
SPANSION LLC |
发明人 |
YANG, NIAN;OGAWA, HIROYUKI;WU, YIDER;CHANG, KUO-TUNG;SUN, YU;HAMILTON, DARLENE, G. |
分类号 |
H01L23/485;G06F17/50;H01L27/02 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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