| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask blank for charged particle beam exposure which improves the yield of mask manufacture, by removing selectively the eaves of a curvature adjustment layer generated when forming an opening by the wet etching method, in the manufacture of the mask for charged particle beam exposure using an SOI substrate with a curvature adjustment layer, and to provide a mask for charged particle beam exposure and a pattern exposure method. <P>SOLUTION: The blank has alkali resistance on the curvature adjustment layer 111, wherein a protective layer 112 should be formed with a different material from the material of the curvature adjustment layer. The materials of the adjustment layer are one kind or two kinds or more of metal, silicon, zirconium or the like. The materials of a protective layer are one or more kinds of metal, such as silicon, zirconium, and molybdenum, or alloy, oxide, or nitride. As for the mask, the etching removal of the eaves 113 of the curvature adjustment layer is selectively carried out considering the protective layer as a mask. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
