| 摘要 |
A semiconductor light-emitting device includes substrate ( 3 ), a plurality of light-emitting-element-layers ( 10 a, 10 b, 10 c, . . . ) of semiconductor material formed on the substrate ( 3 ) so as to be isolated from each other and having a wider band gap than the substrate ( 3 ), and phosphors ( 15 a, 15 b, 15 c, . . . ) converting wavelengths of light from the light-emitting-element-layers ( 10 a, 10 b, 10 c, . . . ) into other wavelengths. |
