发明名称 Improvements in or relating to the production of a housing for electric semi-conductor arrangements
摘要 <p>1,008,443. Welding by pressure; soldering. SIEMENS-SCHUCKERTWERKE A.G. April 13, 1962 [April 15, 1961], No. 14484/62. Heading B3R. [Also in Division H1] In the manufacture of the housing of a semiconductor device two housing parts of different thermal conductivities are joined by resistance welding. To ensure dissipation of the welding heat substantially equally through the two parts the surfaces of the part of higher thermal conductivity meeting at the weld subtend there a smaller angle than the surfaces of the other part. Typically one casing member 1 is a copper-cap to which a silicon junction rectifier element 2 is soldered directly or through a plate of tungsten, tantalum or iron-nickel-cobalt coated molybdenum. The other member is the iron outer flanged member 7 of a pressure glass seal and bears against the outer edge of the cup. This configuration has the disadvantage that pressure exerted by the welding electrodes applied at 8, 9 produces an undesirable radial tensile stress in the pressure glass seal. Such a stress may be avoided by providing an inclined surface on the boss of member 7 engaging the inner edge member 1, or by forming a groove in the lip of member 1 and an engaging ring projection of triangular section on the member 7. The pre-tinned surfaces of tubule 4 and lead 3 may be soldered together or welded together using welding electrodes which also crimp the tubule about the lead.</p>
申请公布号 GB1008443(A) 申请公布日期 1965.10.27
申请号 GB19620014484 申请日期 1962.04.13
申请人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT 发明人
分类号 H01L21/48;H01L23/02 主分类号 H01L21/48
代理机构 代理人
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