| 摘要 |
A method for removing impurities grown on a phase shift mask. The method can advantageously control growth of impurities by further performing HF cleaning and baking after cleaning to minimize the amount of residual chemical ions generated during cleaning. Specifically, the method comprises forming a phase shift mask pattern including a phase shift film and a light-blocking film on a quartz substrate, cleaning the phase shift mask pattern formed on the quartz substrate using a solution containing sulfuric acid ions or ammonium ions, cleaning the cleaned phase shift mask pattern using an aqueous HF solution, and baking the phase shift mask pattern cleaned with the aqueous HF solution.
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