发明名称 Distributed feedback semiconductor laser for outputting beam of single wavelength
摘要 First and second diffraction grating layers are provided above a semiconductor substrate, and are spaced from each other in an output direction of a beam with a flat connecting layer sandwiched therebetween. An active layer is disposed above or below the first and second diffraction grating layers and the connecting layer. A cladding layer is disposed above the active layer or above the first and second diffraction grating layers and the connecting layer. A diffraction grating including the first and second diffraction grating layers has a plurality of slits penetrating from an upper surface to a lower surface that are perpendicular to the output direction of the beam. The connecting layer is formed from two layers grown epitaxially in a direction perpendicular to the output direction of the beam. One of the two layers is formed of the same material as the first and second diffraction grating layers.
申请公布号 US7065123(B2) 申请公布日期 2006.06.20
申请号 US20030461771 申请日期 2003.06.13
申请人 ANRITSU CORPORATION 发明人 MORI HIROSHI;KIKUGAWA TOMOYUKI;TAKAHASHI YOSHIO;FUJITA MOTOAKI
分类号 H01S3/08;H01S5/00;H01S5/12 主分类号 H01S3/08
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