发明名称 |
Distributed feedback semiconductor laser for outputting beam of single wavelength |
摘要 |
First and second diffraction grating layers are provided above a semiconductor substrate, and are spaced from each other in an output direction of a beam with a flat connecting layer sandwiched therebetween. An active layer is disposed above or below the first and second diffraction grating layers and the connecting layer. A cladding layer is disposed above the active layer or above the first and second diffraction grating layers and the connecting layer. A diffraction grating including the first and second diffraction grating layers has a plurality of slits penetrating from an upper surface to a lower surface that are perpendicular to the output direction of the beam. The connecting layer is formed from two layers grown epitaxially in a direction perpendicular to the output direction of the beam. One of the two layers is formed of the same material as the first and second diffraction grating layers.
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申请公布号 |
US7065123(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20030461771 |
申请日期 |
2003.06.13 |
申请人 |
ANRITSU CORPORATION |
发明人 |
MORI HIROSHI;KIKUGAWA TOMOYUKI;TAKAHASHI YOSHIO;FUJITA MOTOAKI |
分类号 |
H01S3/08;H01S5/00;H01S5/12 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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