AN ETCHING METHOD, A METHOD OF FORMING A TRENCH ISOLATION STRUCTURE, A SEMICONDUCTOR SUBSTRATE AND A SEMICONDUCTOR APPARATUS,申请号KR20050074051-传众专利搜索

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发明名称	AN ETCHING METHOD, A METHOD OF FORMING A TRENCH ISOLATION STRUCTURE, A SEMICONDUCTOR SUBSTRATE AND A SEMICONDUCTOR APPARATUS
摘要
申请公布号	KR20060050417(A)	申请公布日期	2006.05.19
申请号	KR20050074051	申请日期	2005.08.12
申请人	SEIKO EPSON CORPORATION;KABUSHIKI KAISHA TOSHIBA	发明人	MATSUO HIROYUKI;NAKAJIMA TOSHIKI;MIYAZAKI KUNIHIRO
分类号	H01L21/306;H01L21/76	主分类号	H01L21/306
代理机构		代理人
主权项
地址

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