| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the coverage of an organic resin film is applied to the upper corner of a Cu electrode layer, even without making the organic resin film thick, and to provide its manufacturing method. <P>SOLUTION: A semiconductor substrate is prepared wherein a 2nd Al film 54 and a P-SiN film 55 are formed, in this order on its uppermost part, and an opening 55a is formed on the upper part of the 2nd Al film 54 in the P-SiN film 55. Next, a Cu electrode layer 2 is formed in the opening 55a through plating method. In this case, the Cu electrode layer 2 is formed so that the upper surface 2a of the Cu electrode layer 2 is located higher at position than for the P-SiN film 55. The Cu film is grown isotropically, so that the upper corner 2g of the Cu electrode layer can be made round in shape. As a result, when an organic resin film 3 is formed on the surface of the Cu electrode layer 2, the film thickness 3b of the organic resin film 3 can be made large at the upper corner 2g of the Cu electrode layer 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
