发明名称 Sensitive silicon sensor and test structure for an ultra-sensitive silicon sensor
摘要 A thermal radiation sensor is disclosed wherein a semiconductor thermocouple comprised of a pair of silicon diodes is connected in back-to-back relationship, with one of the diodes being located in a detector stage. The other diode is located in a heat bath stage together with a sensed temperature difference amplifier. The detector stage is thermally isolated from the heat bath stage by a low thermal conductivity link that includes electrical wires which connect the back-to-back diodes to the amplifier.
申请公布号 US2006081781(A1) 申请公布日期 2006.04.20
申请号 US20050240772 申请日期 2005.10.03
申请人 NORTHROP GRUMMAN CORP. 发明人 BLUZER NATHAN
分类号 G01J5/56 主分类号 G01J5/56
代理机构 代理人
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