发明名称 |
HIGH SPEED MEMORY MODULES UTILIZING ON-TRACE CAPACITORS |
摘要 |
Apparatus and method for producing memory modules having a plurality of dynamic random access memory (DRAM) devices or synchronous random access memory (SDRAM) devices connected to a memory bus, each DRAM or SDRAM device connected to the memory bus via a transmission signal (TS) line. The memory bus includes at least one TS line having a capacitor connected to the TS line in parallel to the plurality of DRAM or SDRAM devices, the TS line connected to the memory bus between a signal insertion end and an attachment point of a TS line of a first DRAM or SDRAM device. A computing system implementing the memory modules is also discussed. |
申请公布号 |
WO2006012290(A3) |
申请公布日期 |
2006.04.06 |
申请号 |
WO2005US22466 |
申请日期 |
2005.06.22 |
申请人 |
INTEL CORPORATION;CHANG, GE;FAHMY, HANY, M |
发明人 |
CHANG, GE;FAHMY, HANY, M |
分类号 |
G06F13/40 |
主分类号 |
G06F13/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|