发明名称 HIGH SPEED MEMORY MODULES UTILIZING ON-TRACE CAPACITORS
摘要 Apparatus and method for producing memory modules having a plurality of dynamic random access memory (DRAM) devices or synchronous random access memory (SDRAM) devices connected to a memory bus, each DRAM or SDRAM device connected to the memory bus via a transmission signal (TS) line. The memory bus includes at least one TS line having a capacitor connected to the TS line in parallel to the plurality of DRAM or SDRAM devices, the TS line connected to the memory bus between a signal insertion end and an attachment point of a TS line of a first DRAM or SDRAM device. A computing system implementing the memory modules is also discussed.
申请公布号 WO2006012290(A3) 申请公布日期 2006.04.06
申请号 WO2005US22466 申请日期 2005.06.22
申请人 INTEL CORPORATION;CHANG, GE;FAHMY, HANY, M 发明人 CHANG, GE;FAHMY, HANY, M
分类号 G06F13/40 主分类号 G06F13/40
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