| 摘要 |
PROBLEM TO BE SOLVED: To provide a small and low-cost semiconductor device with a large noise (injection) resistance wherein Zener diodes are inserted between external terminals and GND. SOLUTION: In the semiconductor device 100 wherein the Zener diodes Z1 and Z2 are inserted between the external terminals t1 and t2 and ground (GND), a resistor Ra is connected in series with the Zener diodes Z1 and Z2. Due to this structure, external noise voltage such as ESD and surge which is applied to the external terminal is divided by the Zener diodes and the resistor connected in series with them, resulting in making the semiconductor device the one with a large noise (injection) resistance. COPYRIGHT: (C)2006,JPO&NCIPI |
