| 发明名称 |
Discontinuous dielectric interface for bipolar transistors |
| 摘要 |
A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.
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| 申请公布号 |
US7008852(B2) |
申请公布日期 |
2006.03.07 |
| 申请号 |
US20040001140 |
申请日期 |
2004.12.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;COOLBAUGH DOUGLAS D.;GILBERT JEFFREY;GRECO JOSEPH R.;MILLER GLENN R. |
| 分类号 |
H01L21/331;H01L29/73;H01L21/314;H01L21/318;H01L21/328;H01L29/08 |
主分类号 |
H01L21/331 |
| 代理机构 |
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