| 摘要 |
<p>To provide an exposure method and mask capable of suppressing a fluctuation of a dimension of a resist pattern caused by a flexure of a membrane and a semiconductor device formed with a fine pattern in high accuracy and a method of producing the same. The exposure method placing an object to be exposed at a surface side of the mask and irradiating the exposure beam to the object to be exposed via the mask from another side of the mask has the steps of: obtaining a distribution of an amount of a flexure of the held mask, and irradiating the exposure beam at an exposure, a focal length, or a dimension of the mask pattern which is changed depending on the amount of the flexure to correct the fluctuation of the dimension depending on the amount of the flexure of a pattern being projected to the object to be exposed. The mask used for the same, the method of producing the semiconductor device including the same, and the semiconductor device produced by the same, are also provided.</p> |
