发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of preventing erroneous determination that an excess current flows although a main current is within a normal current value range. SOLUTION: The power semiconductor device includes a power semiconductor switching element, a control resistor, a drive circuit, a control voltage determination part for determining whether a difference in voltage across the control resistor is smaller than a predetermined voltage difference, and a sensing current determination part for determining whether a sensing current exceeds a predetermined current value. The drive circuit stops the input of a control signal to a control terminal when the difference between first and second voltages is smaller than a predetermined voltage difference, and in addition the sensing current exceeds the predetermined current value. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006032393(A) 申请公布日期 2006.02.02
申请号 JP20040204547 申请日期 2004.07.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOMOMATSU YOSHIFUMI
分类号 H01L23/58 主分类号 H01L23/58
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