| 发明名称 |
INSULATED GATE FIELD EFFECT TRANSISTORS |
| 摘要 |
<p>A field transistor is divided into a number of cells (6) and includes a separate first gate line (20) connected to first transistor cells (8) and a separate second gate line (22) connected to second transistor cells (10). A drive circuit is used to drive all the cells (6) in a normal, saturated operations state but to drive only the second cells (10) in a linear operations state to reduce the number of cells used in the linear operations state.</p> |
| 申请公布号 |
WO2006011111(A1) |
申请公布日期 |
2006.02.02 |
| 申请号 |
WO2005IB52389 |
申请日期 |
2005.07.18 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;CUTTER, JOHN, R. |
发明人 |
CUTTER, JOHN, R. |
| 分类号 |
H01L29/423;H01L27/02;H01L29/78 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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